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Tahirbegi, I. B., Mir, M., (2011). Slit-wave model for band structures in solid state physics Modern Physics Letters B , 25, (3), 151-161

The reason behind the entire development in silicon technology was band models in solid state physics. However, the theories postulated in order to give response to this phenomenon do not explain all kinds of materials. In a bid to overcome this limitation, we approach the problem from another point of view. In this work, the wave properties of the electrons from the external orbitals of the atoms and its diffraction patterns through the lattice structure of the material have been used to explain the band structure of metals, semiconductor and insulators. In order to probe this hypothesis, a simulation has been used and according to the relation between the lattice constant and the atomic diameter, the splitting of the bands have been observed for different kind of materials, showing a strong correlation between the simulation and the experimental results.

Keywords: Electrical band structure, Band gap, Fraunhofer diffraction, Semiconductor, Insulator

Zazoua, A., Kherrat, R., Caballero, D., Errachid, A., Jaffrezic-Renault, N., Bessueille, F., Leonard, D., (2009). Characterisation of a Cr(VI) sensitive polysiloxane membrane by x-ray photoelectron spectrometry and atomic force microscopy Sensor Letters 6th Maghreb-Europe Meeting on Materials and Their Applications for Devices and Physical, Chemical and Biological Sensors , AMER SCIENTIFIC PUBLISHERS (Rabat, Morocco) 7, (5), 995-1000

Cr(VI) sensitive polysiloxane membranes containing tributylphosphate (TBP) or trioctylphosphine oxide (TOPO) were characterized in this study. TBP and TOPO as carriers, have a high selectivity for Cr(VI). The Potentiometric response of EMIS (Electrolyte/Membrane/Insulator/Semiconductor) sensors presents a quasi-nernstian response for Cr2O2-7 exchange. The ion exchange is shown by X-ray photoelectron spectrometry (XPS), the binding energy of the Cr 2p1/2 peak corresponding to Cr(VI) and the atomic composition after exposure to Cr(VI) shows a factor 1.7 higher for silopreneTBP membrane. The conformational topography of both polymeric membranes was characterized by Atomic Force Microscopy (AFM), the exchange of Cr(VI) leading to a heterogeneous topographic state. Adhesion force measurements are also performed to study the properties of adhesion of both selective membranes with a non-functionalized Si AFM tip and with an OTS functionalized one to study the interactions between the tip and the membrane, in liquid before and after the exposure of the membrane to ion chromium. The presence of the ionophores does not practically change the adhesion force compared to pure polysiloxane, showing a good solubility of the ionophore and the orientation of the alkyl chains towards the polysiloxane surface. After the exchange with Cr(VI), the adhesion force decreases drastically due to the hydrophilic character of the surface, complex of Cr(VI) with the P-O groups of both ionophore being oriented towards the surface.

Keywords: AFM, Electrolyte/membrane/insulator/semiconductor structures, Polysiloxane membrane, Xps