P-type copper indium diselenide (CuInSe2) films have been prepared onto ITO substrates by an electrodeposition method, that sequentially applies potential pulses at the deposition potential of each element Cu, Se and In, and then step it back in cyclically to induce the solid state reaction between the elements. Two electrolyte concentrations as well as three different pulse durations were assessed. The resulting films were compared with those deposited at fixed electrode potentials. As-grown films are nanocrystalline and have an E-g similar to 0.95 eV. Raman spectroscopy shows that Se and Cu-Se contents decrease while pulse duration increases and electrolyte concentration decreases. Cu-Se phases are even absent for films grown at the low electrolyte concentration. These results represent a great improvement in the film phase purity reducing the need of post-deposition treatments.