In this work we successfully prepared p-type semiconducting Cu2-xTe layers on Cu substrates by applying a potential multistep signal. Spontaneously deposited tellurium layers were reduced in a single cathodic sweep. The X-ray diffraction characterization showed the presence of single-phased, crystalline Cu2-xTe in the weissite form. A further anodization step allows crystallization of several phases such as CU1.75Te, Cu0.664Te0.336 and CU7Te4. This type of sample was found to be photoactive. The prepared films are p-type and have carrier concentrations in the order of 10(21) CM-3, suitable for CdTe-CU2-xTe contacts.