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Caballero-Briones, F., Palacios-Padrós, A., Sanz, Fausto, (2011). CuInSe2 films prepared by three step pulsed electrodeposition. Deposition mechanisms, optical and photoelectrochemical studies Electrochimica Acta , 56, (26), 9556-9567

p-Type semiconducting copper indium diselenide thin films have been prepared onto In2O3:Sn substrates by a recently developed pulse electrodeposition method that consists in repeated cycles of three potential application steps. The Cu–In–Se electrochemical system and the related single component electrolytes were studied by cyclic voltammetry to identify the electrode processes and study the deposition processes. In situ atomic force microscopy measurements during the first 100 deposition cycles denote a continuous nucleation and growth mechanism. Particles removed by film sonication from some of the films were characterized by transmission electron microscopy and determined to consist in nanoscopic and crystalline CuInSe2. The remaining film is still crystalline CuInSe2, as assessed by X-ray diffraction. The chemical characterization by combined X-ray photoelectron spectroscopy, X-ray fluorescence and inductively coupled plasma optical emission spectroscopy, showed that films were Cu-poor and Se-poor. Raman characterization of the as-grown films showed that film composition varies with film thickness; thinner films are Se-rich, while thicker ones have an increased Cu–Se content. Different optical absorption bands were identified by the analysis of the UV–NIR transmittance spectra that were related with the presence of CuInSe2, ordered vacancy compounds, Se, Cu2−xSe and In2Se3. The photoelectrochemical activity confirmed the p-type character and showed a better response for the films prepared with the pulse method.

Keywords: CuInSe2, Solar cells, Electrodeposition, Optical properties, As-deposited films, ITO substrate


Palacios-Padros, A., Caballero-Briones, F., Sanz, F., (2010). Enhancement in as-grown CuInSe2 film microstructure by a three potential pulsed electrodeposition method Electrochemistry Communications , 12, (8), 1025-1029

P-type copper indium diselenide (CuInSe2) films have been prepared onto ITO substrates by an electrodeposition method, that sequentially applies potential pulses at the deposition potential of each element Cu, Se and In, and then step it back in cyclically to induce the solid state reaction between the elements. Two electrolyte concentrations as well as three different pulse durations were assessed. The resulting films were compared with those deposited at fixed electrode potentials. As-grown films are nanocrystalline and have an E-g similar to 0.95 eV. Raman spectroscopy shows that Se and Cu-Se contents decrease while pulse duration increases and electrolyte concentration decreases. Cu-Se phases are even absent for films grown at the low electrolyte concentration. These results represent a great improvement in the film phase purity reducing the need of post-deposition treatments.

Keywords: CIS, Pulsed electrodeposition, Raman, Solar cells


Caballero-Briones, F., Palacios-Padros, A., Pena, J. L., Sanz, F., (2008). Phase tailored, potentiodynamically grown P-Cu2-xTe/Cu layers Electrochemistry Communications , 10, (11), 1684-1687

In this work we successfully prepared p-type semiconducting Cu2-xTe layers on Cu substrates by applying a potential multistep signal. Spontaneously deposited tellurium layers were reduced in a single cathodic sweep. The X-ray diffraction characterization showed the presence of single-phased, crystalline Cu2-xTe in the weissite form. A further anodization step allows crystallization of several phases such as CU1.75Te, Cu0.664Te0.336 and CU7Te4. This type of sample was found to be photoactive. The prepared films are p-type and have carrier concentrations in the order of 10(21) CM-3, suitable for CdTe-CU2-xTe contacts.

Keywords: Copper telluride, Electrochemical signal, XRD, Morphology, EIS, Photocurrent, Telluride thin-films, Solar cells, Deposition, Cu